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H1061
TRIPLE DIFFUSED SILICON
NPN TRANSISTOR
… designed for low frequency power amplifier
MAXIMUM RATINGS
Characteristic
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Collector Current (Peak) Collector power Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO IC IC PC TJ Tstg
Value
100 80 5 4 8 40 150 -55~150
Unit
V V V A A W °C °C
1 : Base 2 : Collector (Heat Sink) 3 : Emitter Unit in mm TO-220AB Weight: 1.
9g
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ELECTRICAL CHARACTERISTICS
Characteristic
Collector Cut Off Current Collector – Emitter Breakdown Voltage DC Current Gain Collector Emitter Saturation Voltage Base Emit...