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STB55NE06
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET
TYPE ST B55NE06
s s s s s s
V DSS 60 V
R DS(on) 0.
022 Ω
ID 55 A
s
TYPICAL RDS(on) = 0.
019 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC HIGH dv/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE
3 1
DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process.
The resulting
transistor shows extremely high packing density for low onINTERNAL SCHEMATIC DIAGRAM resistance, rugged avalance characteristics and DataSheet4U.
com less critical alignment steps the...