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STB55NE06

ST Microelectronics
Part Number STB55NE06
Manufacturer ST Microelectronics
Description N-CHANNEL POWER MOSFET
Published Jul 15, 2006
Detailed Description www.DataSheet4U.com STB55NE06 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET TYPE ST B55NE06 s s s ...
Datasheet PDF File STB55NE06 PDF File

STB55NE06
STB55NE06

Overview
www.
DataSheet4U.
com STB55NE06 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET TYPE ST B55NE06 s s s s s s V DSS 60 V R DS(on) < 0.
022 Ω ID 55 A s TYPICAL RDS(on) = 0.
019 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC HIGH dv/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE 3 1 DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process.
The resulting transistor shows extremely high packing density for low onINTERNAL SCHEMATIC DIAGRAM resistance, rugged avalance characteristics and DataSheet4U.
com less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION D2PAK TO-263 (suffix ”T4”) DataShee ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID IDM ( • ) P t ot dv/dt T stg Tj Parameter Drain-source Voltage (V GS ...


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