com N-CHANNEL 200V - 0.
35Ω - 9A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE IRF630M IRF630FPM s s s s IRF630M IRF630MFP VDSS 200 V 200 V RDS(on) 0.
40 Ω 0.
40 Ω ID 9A 9A TYPICAL RDS(on) = 0.
35 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-220 3 1 2 1 2 3 TO-220FP DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process.
This technology matches and INTERNAL SCHEMATIC DIAGRAM improves the performances compared with standard parts from various sources.
Isolated TO-220 option simplifies assembly and cuts risk of accidental short circuit in crowded monitor PCB’s.
DataS...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)