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IRF630MFP

ST Microelectronics
Part Number IRF630MFP
Manufacturer ST Microelectronics
Description N-Channel Power MOSFET
Published Jul 15, 2006
Detailed Description www.DataSheet4U.com N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE IRF630M IRF630FPM s s s s IR...
Datasheet PDF File IRF630MFP PDF File

IRF630MFP
IRF630MFP

Overview
www.
DataSheet4U.
com N-CHANNEL 200V - 0.
35Ω - 9A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE IRF630M IRF630FPM s s s s IRF630M IRF630MFP VDSS 200 V 200 V RDS(on) < 0.
40 Ω < 0.
40 Ω ID 9A 9A TYPICAL RDS(on) = 0.
35 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-220 3 1 2 1 2 3 TO-220FP DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process.
This technology matches and INTERNAL SCHEMATIC DIAGRAM improves the performances compared with standard parts from various sources.
Isolated TO-220 option simplifies assembly and cuts risk of accidental short circuit in crowded monitor PCB’s.
DataSheet4U.
com .
APPLICATIONS s MONITOR DISPLAYS s GENERAL PURPOSE SWITCH DataSh ee ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) VISO Tstg Tj Parameter IRF630M Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max.
Operating Junction Temperature 9 5.
7 36 75 0.
6 5 -–65 to 150 150 (1)ISD ≤9A, di/dt ≤300A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX.
(**) Limited only by Maximum Temperature Allowed Value IRF630MFP 200 200 ± 20 9 (**) 5.
7 (**) 36 30 0.
24 5 2500 Unit V V V A A A W W/°C V/ns V °C °C (•)Pulse width limited by safe operating area October 2001 1/9 DataSheet4U.
com DataSheet4U.
com DataSheet 4 U .
com www.
DataSheet4U.
com IRF630M / FP THERMAL DATA TO-220 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1.
67 62.
5 300 TO-220FP 4.
17 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate...


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