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Part Number
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TIM1414-10LA |
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Manufacturer
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Toshiba |
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Description
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Microwave Power GaAs FET |
|
Published
|
Jul 30, 2006 |
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Datasheet
|
TIM1414-10LA
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Features
• Low intermodulation distortion - IM3 = -45 dBc at Po = 29.0 dBm, Single Carrier Level
• High power - P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz
• High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz
• Broadband internally matched
• Hermetically sealed pa...
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