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TIM1414-10A

Toshiba
Part Number TIM1414-10A
Manufacturer Toshiba
Description Microwave Power GAAS Fet
Published Jul 30, 2006
Detailed Description www.DataSheet4U.com TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features • High po...
Datasheet PDF File TIM1414-10A PDF File

TIM1414-10A
TIM1414-10A


Overview
www.
DataSheet4U.
com TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features • High power - P1dB =40.
5 dBm at 14.
0 GHz to14.
5 GHz • High gain - G1dB = 6.
0 dB at 14.
0 GHz to 14.
5 GHz • Broad Band Internally Matched • Hermetically sealed package RF Performance Specifications (Ta = 25° C) Characteristics Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency Channel-Temperature Rise Symbol P1dB G1dB IDS ηadd ∆Tch VDS X IDS X Rth(c-c) VDS = 9V f = 14.
0 ~ 14.
5GHz Condition Unit dBm dB A % °C Min.
40.
0 5.
0 – – – Typ.
40.
5 6.
0 4.
0 23 – Max – – 5.
0 – 90 TIM1414-10A DataShee Electrical Characteristics (Ta = 25°...



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