HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS
DESCRIPTION
The H11GX series are photodarlington-type optically coupled optocouplers.
These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected photo
transistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.
H11G1 H11G2 H11G3
FEATURES
• High BVCEO - Minimum 100 V for H11G1 - Minimum 80 V for H11G2 - Minimum 55 V for H11G3 • High sensitivity to low input current Minimum 500 percent CTR at IF = 1 mA • Low leakage current at elevated temperature (maximum 100 µA at 80°C) • Underwriters Laboratory (UL) recognized File# E90700
APPLICATIONS
• • • • • CMOS logic ...