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H1116

SHANTOU HUASHAN ELECTRONIC DEVICES
Part Number H1116
Manufacturer SHANTOU HUASHAN ELECTRONIC DEVICES
Description PNP SILICON TRANSISTOR
Published Oct 26, 2010
Detailed Description Shantou Huashan Electronic Devices Co.,Ltd. PNP SILICO N T R A N S I S T O R H1116 APPLICATIONS Audio frequency power...
Datasheet PDF File H1116 PDF File

H1116
H1116

Overview
Shantou Huashan Electronic Devices Co.
,Ltd.
PNP SILICO N T R A N S I S T O R H1116 APPLICATIONS Audio frequency power Aamplifier& Medium Speed switching Low frequency power amplifier.
ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature Tj Junction Temperature -55~150 150 PC Collector Dissipation VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage 75 0mW - 60 V - 50 V VEBO Emitter- Base Voltage -6V IC Collector Current -1A ICP Collector Current Pulse -2A ELECTRICAL CHARACTERISTICS Ta=25 Symbol Characteristics Min Typ Max BVCBO Collector-Base Breakdown Voltage BVCEO Collector-Emitter Breakdown Voltage BVEBO Emitter-Base Breakdown Voltage ICBO Collector Cut-off Current IEBO Emitter Cut-off Current HFE 1 DC Current Gain HFE 2 DC Current Gain VCE(sat) Collector- Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage fT Current Gain-Bandwidth Product Cob Output Capacitance hFE Classification TO-92 1 Emitter E 2 Collector C 3 Base B Unit Test Conditions 135 270 200 400 300 600 Shantou Huashan Electronic Devices Co.
,Ltd.
PNP SILICON TRANSISTOR H1116 Shantou Huashan Electronic Devices Co.
,Ltd.
PNP S I L I C O N T R ANSISTOR H1116 ...


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