Part Number
|
H7N0308CF |
Manufacturer
|
Hitachi Semiconductor |
Description
|
Silicon N-Channel MOSFET |
Published
|
Aug 23, 2006 |
Detailed Description
|
H7N0308CF
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance • RDS(on) = 3.8 mΩ typ. • L...
|
Datasheet
|
H7N0308CF
|
Overview
H7N0308CF
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance • RDS(on) = 3.
8 mΩ typ.
• Low drive current • 4.
5 V gate drive device can be driven from 5 V source
Outline
TO-220CFM
ADE-208-1570A(Z)
2nd.
Edition Aug.
2002
D G
S
123
1.
Gate 2.
Drain 3.
Source
H7N0308CF
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation
V DSS
V GSS
ID I Note 1
D(pulse)
I DR
Pch Note 2
Channel to Case Thermal Impedance θch-c
Channel to Ambient Thermal Impedance
θch-a
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1.
PW ≤...
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