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H7N0308AB

Renesas Technology
Part Number H7N0308AB
Manufacturer Renesas Technology
Description Silicon N-Channel MOSFET
Published Oct 14, 2006
Detailed Description H7N0308AB Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 3.8 mΩ typ. • Lo...
Datasheet PDF File H7N0308AB PDF File

H7N0308AB
H7N0308AB

Overview
H7N0308AB Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 3.
8 mΩ typ.
• Low drive current • 4.
5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) 123 G D S REJ03G1122-0400 (Previous: ADE-208-1569B) Rev.
4.
00 Sep 07, 2005 1.
Gate 2.
Drain (Flange) 3.
Source Rev.
4.
00 Sep 07, 2005 page 1 of 6 H7N0308AB Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1%...


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