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2SK3762
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type ( -MOS‡W )
2SK3762
unit•F‚•‚•
Switching
Regulator Applications
3.
84•}0.
2
3.
84•} 0 .
2
10.
5 10.
5 max max
4.
7max 4.
7 max
1.
3 6.
6 max
6.
6 max.
• • • •
Low drain-source ON resistance: R DS (ON) = 5.
6Ħ (typ.
) High forward transfer admittance: |Yfs| = 2.
0 S (typ.
) Low leakage current: IDSS = 100 ƒÊ A (V DS = 720 V) Enhancement-mode: V th = 2.
0~4.
0 V (V DS = 10 V, ID = 1 mA)
1.
3
13.
4 13.
4 min min.
3.
9 max 3.
9 max.
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ ) Gate-source voltage DC Drain current (Note 1) Symbol V DSS V DGR V GSS ID IDP PD EA S IAR E...