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2SK3700

Toshiba Semiconductor
Part Number 2SK3700
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Sep 20, 2014
Detailed Description 2SK3700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ) 2SK3700 Switching Regulator Applications • ...
Datasheet PDF File 2SK3700 PDF File

2SK3700
2SK3700

Overview
2SK3700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ) 2SK3700 Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 2.
0 Ω (typ.
) High forward transfer admittance: |Yfs| = 4.
5 S (typ.
) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) Enhancement model: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 5 15 150 351 5 15 150 −55 to150 Unit V V V A W mJ A mJ °C °C Pulse (Note 1) 1.
GATE 2.
DRAIN (HEAT SINK) 3.
SOURCE Drain power dissipation (Tc=25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2-16C1B Weight: 4.
6 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the applicati...


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