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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF Sub–Micron Bipolar Line
RF Power Bipolar
Transistor
Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz.
The high gain and broadband performance of this device makes it ideal for large–signal, common–emitter class A and class AB amplifier applications.
Suitable for frequency modulated, amplitude modulated and multi–carrier base station RF power amplifiers.
• Specified 26 Volts, 2.
0 GHz, Class AB, Two–Tones Characteristics Output Power — 30 Watts (PEP) Power Gain — 9.
8 dB Efficiency — 34% Intermodulation Distortion — –28 dBc • Typical 26 Volts,...