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MRF20030

Part Number	MRF20030
Manufacturer	Motorola
Description	RF POWER TRANSISTOR
Published	Sep 7, 2006
Detailed Description	www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF20030/D The RF Sub–Micron Bipola...
Datasheet	MRF20030 PDF File

Overview

www.
DataSheet4U.
com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF20030/D The RF Sub–Micron Bipolar Line RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz.
The high gain and broadband performance of this device makes it ideal for large–signal, common–emitter class A and class AB amplifier applications.
Suitable for frequency modulated, amplitude modulated and multi–carrier base station RF power amplifiers.
• Specified 26 Volts, 2.
0 GHz, Class AB, Two–Tones Characteristics Output Power — 30 Watts (PEP) Power Gain — 9.
8 dB Efficiency — 34% Intermodulation Distortion — –28 dBc • Typical 26 Volts, 1.
88 GHz, Class AB, CW Characteristics Output Power — 30 Watts Power Gain — 10.
5 dB Efficiency — 40% • Excellent Thermal Stability • Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 30 Watts (PEP) Output Power • Characterized with Series Equivalent Large–Signal Impedance Parameters • S–Parameter Ch...

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