Part Number
|
BAW101S |
Manufacturer
|
NXP |
Description
|
High voltage double diode |
Published
|
Oct 16, 2006 |
Detailed Description
|
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
MBD128
BAW101S High voltage double diode
Product data sheet
2003 ...
|
Datasheet
|
BAW101S
|
Overview
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
MBD128
BAW101S High voltage double diode
Product data sheet
2003 May 13
NXP Semiconductors
High voltage double diode
Product data sheet
BAW101S
FEATURES • Small plastic SMD package • High switching speed: max.
50 ns • High continuous reverse voltage: 300 V • Electrically insulated diodes.
APPLICATIONS • High voltage switching • Automotive • Communication.
PINNING
PIN 1 2 3 4 5 6
DESCRIPTION anode 1 n.
c.
cathode 2 anode 2 n.
c.
cathode 1
DESCRIPTION
The BAW101S is a high-speed switching diode array with two separate dice, fabricated in planar technology and encapsulated in a small SOT363 plastic SMD package.
handbook, halfpage
65
4...
Similar Datasheet