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BAW101

NXP
Part Number BAW101
Manufacturer NXP
Description High voltage double diode
Published Feb 6, 2016
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BAW101 High voltage double diode Product data sheet 2003 May 13 NXP Semico...
Datasheet PDF File BAW101 PDF File

BAW101
BAW101

Overview
DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BAW101 High voltage double diode Product data sheet 2003 May 13 NXP Semiconductors High voltage double diode Product data sheet BAW101 FEATURES • Small plastic SMD package • High switching speed: max.
50 ns • High continuous reverse voltage: 300 V • Electrically insulated diodes.
APPLICATIONS • High voltage switching • Automotive • Communication.
PINNING PIN 1 2 3 4 DESCRIPTION cathode 1 cathode 2 anode 2 anode 1 handbook, halfpage4 3 43 DESCRIPTION The BAW101 is a high-speed switching diode array with two separate dice, fabricated in planar technology and encapsulated in a small SOT143B plastic SMD package.
MARKING TYPE NUMBER BAW101 MARKING CODE(1) ∗AB Note 1.
∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
1 Top view 2 12 MAM059 Fig.
1 Simplified outline (SOT143B) and symbol.
2003 May 13 2 NXP Semiconductors High voltage double diode Product data sheet BAW101 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN.
Per diode VR continuous reverse voltage VRRM repetitive peak reverse voltage IF continuous forward current IFRM IFSM Ptot Tstg Tj Tamb repetitive peak forward current non-repetitive peak forward current total power dissipation storage temperature junction temperature operating ambient temperature series connection series connection single diode loaded; note 1; see Fig.
2 double diode loaded; note 1; see Fig.
2 square wave; Tj = 25 °C prior to surge; t = 1 µs Tamb = 25 °C; note 1 − − − − − − − − − −65 − −65 Note 1.
Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm2.
MAX.
300 600 300 600 250 140 625 4.
5 350 +150 150 +150 UNIT V V V V mA mA mA A mW °C °C °C ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN.
Per diode VBR(R) VF IR reverse breakdown voltage forward voltage reverse current trr reverse recovery t...


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