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RSM002P03
Transistors
4V Drive Pch MOS FET
RSM002P03
zStructure Silicon P-channel MOS FET zExternal dimensions (Unit : mm)
VMT3
zFeatures 1) Low On-resistance.
2) Small package (VMT3).
3) 4V drive.
(1)Gate (2)Source
(3)
0.
2
0.
22
(1)(2)
0.
8 1.
2
0.
4 0.
4 0.
8 0.
13 0.
5
(3)Drain
Abbreviated symbol : WP
zApplications Switching zPackaging specifications
Package Type RSM002P03 Code Basic ordering unit (pieces) Taping T2L 8000
zInner circuit
(3)
(1)
∗2 ∗1
0.
2
1.
2 0.
32
(2)
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
(1) Gate (2) Source (3) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current
Total power dissipation Ch...