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RSM002P03

Rohm
Part Number RSM002P03
Manufacturer Rohm
Description 4V Drive Pch MOS FET
Published Oct 27, 2006
Detailed Description www.DataSheet4U.com RSM002P03 Transistors 4V Drive Pch MOS FET RSM002P03 zStructure Silicon P-channel MOS FET zExterna...
Datasheet PDF File RSM002P03 PDF File

RSM002P03
RSM002P03

Overview
www.
DataSheet4U.
com RSM002P03 Transistors 4V Drive Pch MOS FET RSM002P03 zStructure Silicon P-channel MOS FET zExternal dimensions (Unit : mm) VMT3 zFeatures 1) Low On-resistance.
2) Small package (VMT3).
3) 4V drive.
(1)Gate (2)Source (3) 0.
2 0.
22 (1)(2) 0.
8 1.
2 0.
4 0.
4 0.
8 0.
13 0.
5 (3)Drain Abbreviated symbol : WP zApplications Switching zPackaging specifications Package Type RSM002P03 Code Basic ordering unit (pieces) Taping T2L 8000 zInner circuit (3) (1) ∗2 ∗1 0.
2 1.
2 0.
32 (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Gate (2) Source (3) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 P D ∗2 Tch Tstg Limits −30 ±20 ±0.
2 ±0.
4 0.
15 150 −55 to +150 Unit V V A A W °C °C zThermal resistance Parameter Channel to ambien...


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