|
Part Number
|
TIM1011-2L |
|
Manufacturer
|
Toshiba Semiconductor |
|
Description
|
MICROWAVE POWER GaAs FET |
|
Published
|
Nov 14, 2006 |
|
Datasheet
|
TIM1011-2L
|
Features
MICROWAVE POWER GaAs FET
TIM1011-2L
HIGH POWER P1dB=33.5dBm at 10.7GHz to 11.7GHz HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz
BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTER...
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