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TIM1011-4UL

Toshiba
Part Number TIM1011-4UL
Manufacturer Toshiba
Description MICROWAVE POWER GaAs FET
Published Jun 19, 2020
Detailed Description FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 10.7GHz to 11.7GHz ･HIGH GAIN G1dB= 9.5dB at 10...
Datasheet PDF File TIM1011-4UL PDF File

TIM1011-4UL
TIM1011-4UL

Overview
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.
5dBm at 10.
7GHz to 11.
7GHz ･HIGH GAIN G1dB= 9.
5dB at 10.
7GHz to 11.
7GHz ･LOW INTERMODULATION DISTOTION IM3=-45dBc at Pout= 24.
0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1011-4UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current SYMBOL CONDITIONS P1dB G1dB IDS1 VDS= 10V IDSset= 1.
0A f=10.
7 to 11.
7 GHz UNIT dBm dB A Gain Flatness G dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 24.
0dBm, f= 5MHz (Single Carrier Level) A Channel Temperature Rise Tch (VDS X IDS + Pin – P1dB) X Rth(c-c) °C Recommended Gate Resistance(Rg): 150  MIN.
35.
5 8.
5    -42   TYP.
MAX.
36.
5  9.
5  1.
1 1.
6  ±0.
8 36  -45  1.
1 1.
6  60 ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS CONDITIONS VDS= 3V IDS= 1.
2A VDS= 3V IDS= 40mA VDS= 3V VGS= 0V VGSO IGS= -40A Rth(c-c) Channel to Case UNIT MIN.
TYP.
MAX.
S  1.
2  V -0.
5 -2.
0 -4.
5 A  2.
2  V -5   °C/W  3.
8 4.
4  The information contained herein is presented as guidance for product use.
No responsibility is assumed by TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter, referred to as “TISS”) for any infringement of patents or any other intellectual property rights of third parties that may result from the use of product.
No license to any intellectual property right is granted by this document.
The information contained herein is subject to change without prior notice.
It is advisable to contact TISS before proceeding with design of equipment incorporating this product.
Copyright © 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATI...


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