Part Number
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TIM1011-5L |
Manufacturer
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Toshiba Semiconductor |
Description
|
MICROWAVE POWER GaAs FET |
Published
|
Nov 14, 2006 |
Detailed Description
|
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 37.5dBm at 10.7GHz to 11.7GHz ・HIGH GAIN
G1dB= 7.0dB at 10...
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Datasheet
|
TIM1011-5L
|
Overview
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 37.
5dBm at 10.
7GHz to 11.
7GHz ・HIGH GAIN
G1dB= 7.
0dB at 10.
7GHz to 11.
7GHz ・HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM1011-5L
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C)
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
SYMBOL
CONDITIONS
P1dB
G1dB IDS1
VDS= 9V IDSset= 2.
0A f=10.
7 to 11.
7 GHz
UNIT dBm dB
A
Gain Flatness
G
dB
Power Added Efficiency
add
%
3rd Order Intermodulation Distortion
Drain Current
IM3 IDS2
Two Tone Test
dBc
Po= 25.
0dBm, f= 5MHz
(Single Carrier Level)
A
Channel Temperature Rise
Tch
(VDS X IDS + Pin – P1dB)
...
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