HAT2198R Silicon N Channel Power MOS FET Power Switching Features • High speed switching • Capable of 4.
5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 7.
2 mΩ typ.
(at VGS = 10 V) Outline SOP-8 5 678 D DDD 4 G SS S 12 3 8 7 65 1 234 REJ03G0062-020 Rev.
2.
0 6HS.
8.
20 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS 30 Gate to source voltage VGSS ±20 Drain current Drain peak current ID ID(pulse)Note1 14 112 Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to ambient thermal impedance IDR IAP Note 2 EAR Note 2 ...

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