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HAT2191WP

Renesas Technology
Part Number HAT2191WP
Manufacturer Renesas Technology
Description Silicon N-Channel Power MOSFET
Published Nov 20, 2008
Detailed Description HAT2191WP Silicon N Channel Power MOS FET Power Switching Features • Low on-resistance • Low drive current • High densit...
Datasheet PDF File HAT2191WP PDF File

HAT2191WP
HAT2191WP

Overview
HAT2191WP Silicon N Channel Power MOS FET Power Switching Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 678 D DDD 5 678 4 G 4 32 1 S SS 1 23 REJ03G1223-0500 Rev.
5.
00 Jun.
02.
2005 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID Note1 (pulse) IDR IDR Note1 (pulse) IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 250 ±30 14 28 14 28 7 3.
0 30 4.
17 150 –55 to +150 (Ta = 25°C) Unit V V A A A A A mJ W °C/W °C °C Rev.
5.
00, Jun.
02.
2005, page 1 of 3 HAT2191WP Electrical Characteristics Item Symbol Min Drain to source breakdown voltage V(BR)DSS 250 Zero gate voltage drain current IDSS — Gate to source leak current IGSS — Gate to source cutoff voltage VGS(off) 3.
0 Forward transfer admittance |yfs| 7 Static drain to source on state resistance RDS(on) — Input capacitance Ciss — Output capacitance Coss — Reverse transfer capacitance Crss — Turn-on delay time td(on) — Rise time tr — Turn-off delay time td(off) — Fall time tf — Total gate charge Qg — Gate to source charge Qgs — Gate to drain charge Qgd — Body-drain diode forward voltage VDF — Body-drain diode reverse recovery time trr — Notes: 4.
Pulse test Typ — — — — 12 0.
120 Max — 1 ±0.
1 4.
5 — 0.
138 Unit V µA µA V S Ω (Ta = 25°C) Test conditions ID = 10 mA, VGS = 0 VDS = 250 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 7 A, VDS = 10 V Note4 ID = 7 A, VGS = 10 VNote4 1200 185 14 30 45 60 15 27 7 10 0.
86 150 — — — — — — — ...


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