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Freescale Semiconductor Technical Data
Document Number: MRF9002NR2 Rev.
8, 5/2006
RF Power Field Effect
Transistor Array
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequencies to 1000 MHz.
The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment.
The device is in a PFP - 16 Power Flat Pack package which gives excellent thermal performances through a solderable backside contact.
• Typical Performance at 960 MHz, 26 Volts Output Power — 2 Watts Per
Transistor Power Gain — 18 dB Efficiency — 50% • Ca...