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MRF9002NR2

Part Number	MRF9002NR2
Manufacturer	Freescale Semiconductor
Description	RF Power FET
Published	Nov 21, 2006
Detailed Description	www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF9002NR2 Rev. 8, 5/2006 RF Power Field ...
Datasheet	MRF9002NR2 PDF File

Overview

www.
DataSheet4U.
com Freescale Semiconductor Technical Data Document Number: MRF9002NR2 Rev.
8, 5/2006 RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 1000 MHz.
The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment.
The device is in a PFP - 16 Power Flat Pack package which gives excellent thermal performances through a solderable backside contact.
• Typical Performance at 960 MHz, 26 Volts Output Power — 2 Watts Per Transistor Power Gain — 18 dB Efficiency — 50% • Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 Watts CW Output Power Features • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • RoHS Compliant • In Tape and Reel.
R2 Suffix = 1,500 Un...

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MRF9002NR2 RF Power FET - Freescale Semiconductor

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