FDFS2P753Z Integrated P-Channel PowerTrench® MOSFET and
Schottky Diode
November 2006
FDFS2P753Z tm
Integrated P-Channel PowerTrench® MOSFET and
Schottky Diode
-30V, -3A, 115mΩ
Features
General Description
Max rDS(on) = 115mΩ at VGS = -10V, ID = -3.
0A Max rDS(on) = 180mΩ at VGS = -4.
5V, ID = -1.
5A VF 500mV @ 1A
VF 580mV @ 2A
Schottky and MOSFET incorporated into single power surface
mount SO-8 package
Electrically independent
Schottky and MOSFET pinout for design flexibility
RoHS Compliant
The FDFS2P753Z combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop
Schottky barrier rectifier in an SO-8 package.
Th...