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FDFS2P753Z

Fairchild Semiconductor
Part Number FDFS2P753Z
Manufacturer Fairchild Semiconductor
Description P-Channel MOSFET and Schottky Diode
Published Nov 27, 2006
Detailed Description FDFS2P753Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode November 2006 FDFS2P753Z tm Integrated P-Channe...
Datasheet PDF File FDFS2P753Z PDF File

FDFS2P753Z
FDFS2P753Z


Overview
FDFS2P753Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode November 2006 FDFS2P753Z tm Integrated P-Channel PowerTrench® MOSFET and Schottky Diode -30V, -3A, 115mΩ Features General Description „ Max rDS(on) = 115mΩ at VGS = -10V, ID = -3.
0A „ Max rDS(on) = 180mΩ at VGS = -4.
5V, ID = -1.
5A „ VF < 500mV @ 1A VF < 580mV @ 2A „ Schottky and MOSFET incorporated into single power surface mount SO-8 package „ Electrically independent Schottky and MOSFET pinout for design flexibility „ RoHS Compliant The FDFS2P753Z combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package solution for DC to DC converters.
It features a fast switching, low gate charge MOSFET with very low on-state resistance.
The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.
Application „ DC - DC...



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