www.
DataSheet4U.
com
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document by MRFG35010MT1/D
The RF GaAs Line
Gallium Arsenide PHEMT
RF Power Field Effect
Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.
8 to 3.
6 GHz.
Device is unmatched and is suitable for use in Class AB linear base station applications.
• Typical W - CDMA Performance: - 42 dBc ACPR, 3.
55 GHz, 12 Volts, IDQ = 180 mA, 5 MHz Offset/3.
84 MHz BW, 64 DPCH (8.
5 dB P/A @ 0.
01% Probability) Output Power — 900 mW Power Gain — 10 dB Efficiency — 28%
MRFG35010MT1
3.
5 GHz, 9 W, 12 V POWER FET GaAs PHEMT
Freescale Semiconductor, Inc.
.
.
• 9 Watts P1dB @ 3.
...