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MRFG35010MT1

Part Number	MRFG35010MT1
Manufacturer	Motorola
Description	RF Power Field Effect Transistor
Published	Dec 4, 2006
Detailed Description	www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRFG3...
Datasheet	MRFG35010MT1 PDF File

Overview

www.
DataSheet4U.
com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.
Order this document by MRFG35010MT1/D The RF GaAs Line Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.
8 to 3.
6 GHz.
Device is unmatched and is suitable for use in Class AB linear base station applications.
• Typical W - CDMA Performance: - 42 dBc ACPR, 3.
55 GHz, 12 Volts, IDQ = 180 mA, 5 MHz Offset/3.
84 MHz BW, 64 DPCH (8.
5 dB P/A @ 0.
01% Probability) Output Power — 900 mW Power Gain — 10 dB Efficiency — 28% MRFG35010MT1 3.
5 GHz, 9 W, 12 V POWER FET GaAs PHEMT Freescale Semiconductor, Inc.
.
.
• 9 Watts P1dB @ 3.
...

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MRFG35010MT1 RF Power Field Effect Transistor - Motorola

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