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June/2004
MITSUBISHI SEMICONDUCTOR GaAs FET
MGF4953A/MGF4954A
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
DESCRIPTION
The MGF4953A/MGF4954A super-low noise HEMT (High Electron Mobility
Transistor) is designed for use in C to K band amplifiers.
The lead-less ceramic package assures minimum parasitic losses.
Outline Drawing
FEATURES
Low noise figure @ f=12GHz MGF4953A : NFmin.
= 0.
40dB (Typ.
) MGF4954A : NFmin.
= 0.
60dB (Typ.
) High associated gain @ f=12GHz Gs = 13.
5dB (Typ.
)
Fig.
1
APPLICATION
C to K band low noise amplifiers
MITSUBISHI Proprietary
Not to be reproduced or disclosed without permission by Mitsubishi Electric
QUALITY GRADE
GG
RECOMMENDED...