June/2004
MITSUBISHI SEMICONDUCTOR
MGF4951A/MGF4952A
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
DESCRIPTION
The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.
The lead-less ceramic package assures minimum parasitic losses.
Outline Drawing
FEATURES
Low noise figure
@ f=12GHz
MGF4951A : NFmin. = 0. 40dB (Typ. )
MGF4952A : NFmin. = 0. 60dB (Typ. )
Fig. 1
High associated gain
@ f=12GHz
Gs = 12. 0dB (Typ. )
APPLICATION
C to K band low noise amplifiers
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
MITSUBISHI Proprietary
Not to be reproduced or disclosed without permission by...
MGF4951A PDF File
