TPCF8201
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (U-MOS III)
TPCF8201
Notebook PC Applications Portable Equipment Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.
) • High forward transfer admittance: |Yfs| = 5.
4 S (typ.
) • Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) • Enhancement-mode: Vth = 0.
5 to 1.
2 V (VDS = 10 V, ID = 200 μA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC Pulse
(Note 1) (Note 1)
Single-device operation
Drain power
(Note 3a)
dissipation
(t = 5 s) (Note 2a) Single-device value at
du...