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TPCF8201

Part Number	TPCF8201
Manufacturer	Toshiba Semiconductor
Description	Silicon N-Channel MOSFET
Published	Dec 20, 2006
Detailed Description	TPCF8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPCF8201 Notebook PC Applications Porta...
Datasheet	TPCF8201 PDF File

Overview

TPCF8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPCF8201 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.
) • High forward transfer admittance: |Yfs| = 5.
4 S (typ.
) • Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) • Enhancement-mode: Vth = 0.
5 to 1.
2 V (VDS = 10 V, ID = 200 μA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Single-device operation Drain power (Note 3a) dissipation (t = 5 s) (Note 2a) Single-device value at du...

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TPCF8201 Silicon N-Channel MOSFET - Toshiba Semiconductor

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