com
30V N-Channel Enhancement Mode MOSFET
V DS =30V R DS(ON) ,Vgs@10V,Ids@45A=6 m Ù R DS(ON) ,Vgs@4. 5V,Ids@30A=10 m Ù
FEATURES
Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for DC/DC Converters and Motor Drivers Fully Characterized Avalanche Voltage and Current
TO-252(D-PAK) Top View
G
D
S
mi
Gate
Absolute Maximum Ratings (TA=25
Parameter
Drain-Source Voltage Gate-Source Voltage Pulsed Drain
Symbol
V DS ID V GS I DM PD TJ
na
Drain
INTERNAL SCHEMATIC DIAGRAM
Unless Otherwise Noted)
Limit
30 20 60 350 70 42 -55 to 150 300 1. 8 40 mJ
eli
Current 1) T stg E AS R R
JC JA
Continuous Drain Current
T A=25 T A=...