IXKC20N60C

IXKC 20N60C CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge D G S VDSS = 600 V ID25 = 15 A RDS(on) max = 190 mΩ ISOPLUS220TM G D S E72873 q isolated tab MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR Conditions TVJ = 25°C TC = 25°C TC = ...