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IXKC20N60C

IXYS Corporation
Part Number IXKC20N60C
Manufacturer IXYS Corporation
Description CoolMOS Power MOSFET
Published Dec 27, 2006
Detailed Description IXKC 20N60C CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancem...
Datasheet PDF File IXKC20N60C PDF File

IXKC20N60C
IXKC20N60C

Overview
IXKC 20N60C CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge D G S VDSS = 600 V ID25 = 15 A RDS(on) max = 190 mΩ ISOPLUS220TM G D S E72873 q isolated tab MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR Conditions TVJ = 25°C TC = 25°C TC = 90°C single pulse; ID = 10 A; TC = 25°C repetitive; ID = 20 A; TC = 25°C Maximum Ratings 600 V ± 20 V 15 A 10.
5 A 690 mJ 1 mJ Symbol RDSon VGS(th) IDSS IGSS Ciss Coss Qg Qgs Qgd td(on) tr td(off) tf RthJC Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min.
typ.
max.
VGS = 10 V; ID = 16 A VDS = VGS; ID =...


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