www.
DataSheet4U.
com High Voltage Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary Data Sheet VDSS ID25 3A 3A RDS(on) 4.
5 Ω 4.
0 Ω IXTA/IXTP 3N120 IXTA/IXTP 3N110 1200 V 1100 V Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 3N120 3N110 3N120 3N110 Maximum Ratings 1200 1100 1200 1100 ±20 ±30 3 12 3 20 700 5 150 -55 to +150 150 -55 to +150 V V V V D (TAB) TO-220 (IXTP) V V A A A mJ mJ V/ns W °C °C ...

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