DatasheetsPDF.com

IXTP3N100D2

IXYS
Part Number IXTP3N100D2
Manufacturer IXYS
Description MOSFET
Published Dec 31, 2016
Detailed Description Depletion Mode MOSFET IXTA3N100D2 IXTP3N100D2 N-Channel D G S Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weigh...
Datasheet PDF File IXTP3N100D2 PDF File

IXTP3N100D2
IXTP3N100D2

Overview
Depletion Mode MOSFET IXTA3N100D2 IXTP3N100D2 N-Channel D G S Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C Continuous Transient TC = 25C Maximum Lead Temperature for Soldering 1.
6 mm (0.
062in.
) from Case for 10s Mounting Torque (TO-220) TO-263 TO-220 Maximum Ratings 1000 V 20 V 30 V 125 W - 55 .
.
.
+150 150 - 55 .
.
.
+150 C C C 300 °C 260 °C 1.
13 / 10 Nm/lb.
in.
2.
5 g 3.
0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSX VGS = - 5V, ID = 250A VGS(off) VDS = 25V, ID = 250A IGSX VGS = 20V, VDS = 0V IDSX(off) VDS = VDSX, VGS = - 5V RDS(on) ID(on) VGS = 0V, ID = 1.
5A, Note 1 VGS = 0V, VDS = 50V, Note 1 TJ = 125C Characteristic Values Min.
Typ.
Max.
1000 V - 2.
5 - 4.
5 V 100 nA 5 A 50 A 6 3A VDSX ID(on) = > RDS(on) 1000V 3A 6 TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) GD S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features • Normally ON Mode • International Standard Packages • Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages • Easy to Mount • Space Savings • High Power Density Applications • Audio Amplifiers • Start-Up Circuits • Protection Circuits • Ramp Generators • Current Regulators • Active Loads © 2017 IXYS CORPORATION, All Rights Reserved DS100184E(4/17) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Ciss Coss Crss VDS = 30V, ID = 1.
5A, Note 1 VGS = -10V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Resistive Switching Times VGS =  5V, VDS = 500V, ID = 1.
5A RG = 3.
3 (External) Qg(on) Qgs Qgd VGS = 5V, VDS = 500V, ID = 1.
5A RthJC RthCS TO-220 Characteristic Values Min.
Typ.
Max.
1.
2 2.
0 S 1020 68 17 pF pF pF 27 ns 67 ns 34 ns 40 ns 37.
5 4.
4 21.
2 nC nC nC 1.
0 C/W 0.
50 C/W Safe-Operating-Area Specification Symbol SOA Test Conditions VDS = 800V, ID = 94mA, TC = 75C, Tp = 5s Characteristic Values Min.
Typ.
Max.
75 W Source-Drain Diode Symbol ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)