Part Number
|
IXTP3N120 |
Manufacturer
|
IXYS Corporation |
Description
|
Power MOSFET |
Published
|
Dec 29, 2006 |
Detailed Description
|
High Voltage Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTA3N120 IXTP3N120 IXTH3N120...
|
Datasheet
|
IXTP3N120
|
Overview
High Voltage Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTA3N120 IXTP3N120 IXTH3N120
Symbol
VDSS VDGR VGSS VGSM ID25 IDM
IA EAS
dv/dt
PD TJ TJM Tstg TL TSOLD FC Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient
Maximum Ratings
1200
V
1200
V
20
V
30
V
TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C
IS IDM, VDD VDSS, TJ 150C TC = 25C
3 12
3 700
5 200 -55 .
.
.
+150 150 -55 .
.
.
+150
A A A mJ
V/ns W C C C
Maximum Lead Temperature for Soldering
300
°C
1.
6 mm (0.
062in.
) from Case for 10s
260
°C
Mounting Force (TO-263)
10.
.
65 / 2.
2.
.
14.
6
Mounting Torque (TO-247 & T...
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