Part Number
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HE8807FL |
Manufacturer
|
Hitachi Semiconductor |
Description
|
(HE8807FL/SG) GaAlAs Infrared Emitting Diodes |
Published
|
Dec 30, 2006 |
Detailed Description
|
www.DataSheet4U.com
HE8807SG/FL
GaAlAs Infrared Emitting Diodes
Description
The HE8807SG/FL are single heterojunction ...
|
Datasheet
|
HE8807FL
|
Overview
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DataSheet4U.
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HE8807SG/FL
GaAlAs Infrared Emitting Diodes
Description
The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm.
Features
• • • • • High output, high efficiency Narrow spectral width Sharp radiation directivity (HE8807FL) Wide radiation directivity (HE8807SG) High reliability
Absolute Maximum Ratings (TC = 25°C)
Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Rated Value 200 3 –20 to +85 –40 to +100 Units mA V °C °C
245
HE8807SG/FL
Optical and Electrical Characteristics (TC = 25°C)
Item Optical output power HE8807SG HE8807FL Peak wavelength Spectral width Forwa...
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