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HE8807FL

Hitachi Semiconductor
Part Number HE8807FL
Manufacturer Hitachi Semiconductor
Description (HE8807FL/SG) GaAlAs Infrared Emitting Diodes
Published Dec 30, 2006
Detailed Description www.DataSheet4U.com HE8807SG/FL GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction ...
Datasheet PDF File HE8807FL PDF File

HE8807FL
HE8807FL

Overview
www.
DataSheet4U.
com HE8807SG/FL GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm.
Features • • • • • High output, high efficiency Narrow spectral width Sharp radiation directivity (HE8807FL) Wide radiation directivity (HE8807SG) High reliability Absolute Maximum Ratings (TC = 25°C) Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Rated Value 200 3 –20 to +85 –40 to +100 Units mA V °C °C 245 HE8807SG/FL Optical and Electrical Characteristics (TC = 25°C) Item Optical output power HE8807SG HE8807FL Peak wavelength Spectral width Forwa...


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