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Part Number
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HE8811 |
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Manufacturer
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Hitachi |
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Description
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GaAlAs Infrared Emitting Diode |
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Published
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Dec 30, 2006 |
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Detailed Description
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www.DataSheet4U.com
HE8811
GaAlAs Infrared Emitting Diode
ODE-208-999B (Z) Rev.2 Mar. 2005 Description
The HE8811 is a...
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Datasheet
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HE8811
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Overview
www.
DataSheet4U.
com
HE8811
GaAlAs Infrared Emitting Diode
ODE-208-999B (Z) Rev.
2 Mar.
2005 Description
The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure.
It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments and infrared-beam communication equipment.
Features
• High-frequency response • High efficiency and high output power • Broad radiation pattern
Package Type • HE8811: SG1 Internal Circuit
1
2
HE8811
Absolute Maximum Ratings
(TC = 25°C)
Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Value 200 3 –20 to +60 –40 to +90 Unit mA V °C °...
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