Part Number
|
SSW2N80A |
Manufacturer
|
Fairchild Semiconductor |
Description
|
Advanced Power MOSFET |
Published
|
Jan 11, 2007 |
Detailed Description
|
com
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input...
|
Datasheet
|
SSW2N80A
|
Overview
com
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.
) @ VDS = 800V Low RDS(ON) : 4.
688 Ω (Typ.
)
SSW/I2N80A
BVDSS = 800 V RDS(on) = 6.
0 Ω ID = 2 A
D2-PAK
2
I2-PAK
1 1 3 2 3
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recove...
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