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SSW2N80A

Fairchild Semiconductor
Part Number SSW2N80A
Manufacturer Fairchild Semiconductor
Description Advanced Power MOSFET
Published Jan 11, 2007
Detailed Description www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input...
Datasheet PDF File SSW2N80A PDF File

SSW2N80A
SSW2N80A

Overview
www.
DataSheet4U.
com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.
) @ VDS = 800V Low RDS(ON) : 4.
688 Ω (Typ.
) SSW/I2N80A BVDSS = 800 V RDS(on) = 6.
0 Ω ID = 2 A D2-PAK 2 I2-PAK 1 1 3 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8“ from case for 5-seconds 300 Ο Ο Ο Value 800 2 1.
3 1 O Units V A A V mJ A mJ V/ns W W/ C Ο 8 + _ 30 213 2 8 2.
0 3.
1 80 0.
64 - 55 to +150 O 1 O 1 O 3 O 2 Ο C Thermal Resistance Symbol RθJC RθJA RθJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ.
---Max.
1.
56 40 62.
5 Ο Units C/W * When mounted on the minimum pad size recommended (PCB Mount).
Rev.
B ©1999 Fairchild Semiconductor Corporation SSW/I2N80A Ο N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25 C unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coeff.
Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Min.
Typ.
Max.
Units 800 -2.
0 -----------------1.
06 -----...


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