Part Number
|
MA4AGBLP912 |
Manufacturer
|
Tyco Electronics |
Description
|
AlGaAs Beam Lead PIN Diode |
Published
|
Jan 21, 2007 |
Detailed Description
|
www.DataSheet4U.com
AlGaAs Beam Lead PIN Diode
V 1.00
MA4AGBLP912
Features
n n n n n n n
Outline ( Topview )
Ultra...
|
Datasheet
|
MA4AGBLP912
|
Overview
www.
DataSheet4U.
com
AlGaAs Beam Lead PIN Diode
V 1.
00
MA4AGBLP912
Features
n n n n n n n
Outline ( Topview )
Ultra Low Capacitance 22 fF Excellent RC Product 0.
10 pS High Switching Cutoff Frequency 110 GHz 5 Nanosecond Switching Speed Driven by Standard +5 V TTL PIN Diode Driver Silicon Nitride Passivation Polyamide Scratch Protection
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+
Description
M/A-COM's MA4AGBLP912 is an Aluminum-Gallium-Arsenide Anode Enhanced, Beam Lead PIN Diode.
AlGaAs anodes, which utilize M/A-COM’s patent pending hetero-junction technology, produce less diode “On” resistance than conventional GaAs devices.
These devices are fabricated on a OMCVD epitaxial wafer using a process designed for high de...
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