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MA4AGBLP912

MA-COM
Part Number MA4AGBLP912
Manufacturer MA-COM
Description AlGaAs Beamlead PIN Diode
Published Mar 23, 2019
Detailed Description AlGaAs Beamlead PIN Diode Features • Low Series Resistance • Low Capacitance • 5 Nanosecond Switching Speed • Can be Dr...
Datasheet PDF File MA4AGBLP912 PDF File

MA4AGBLP912
MA4AGBLP912

Overview
AlGaAs Beamlead PIN Diode Features • Low Series Resistance • Low Capacitance • 5 Nanosecond Switching Speed • Can be Driven by a Buffered +5 V TTL • Silicon Nitride Passivation • Polyimide Scratch Protection • RoHS Compliant Applications • Aerospace & Defense • ISM Description The MA4AGBLP912 is an Aluminum-GalliumArsenide anode enhanced, beam lead PIN diode.
AlGaAs anodes, which utilize MACOM’s patented hetero-junction technology, produce less diode “On” resistance than conventional GaAs or silicon devices.
This device is fabricated in a OMCVD system using a process optimized for high device uniformity and extremely low parasitics.
The result is a diode with low series resistance, 4 Ω, low...


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