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2SC5755
TOSHIBA
Transistor Silicon
NPN Epitaxial Type
2SC5755
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
· · · High DC current gain: hFE = 400 to 1000 (IC = 0.
2 A) Low collector-emitter saturation voltage: VCE (sat) = 0.
12 V (max) High-speed switching: tf = 25 ns (typ.
) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC t = 10 s DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC (Note) Tj Tstg Rating 20 10 7 2 3.
5 200 500 750 150 -55 to 150 Unit V V V A mA mW...