Part Number
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K4M513233C |
Manufacturer
|
Samsung semiconductor |
Description
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4M x 32Bit x 4 Banks Mobile SDRAM |
Published
|
Jan 27, 2007 |
Detailed Description
|
com
K4M513233C - S(D)N/G/L/F
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 3.0V & 3.3V power s...
|
Datasheet
|
K4M513233C
|
Overview
com
K4M513233C - S(D)N/G/L/F
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 3.
0V & 3.
3V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-.
CAS latency (1, 2 & 3).
-.
Burst length (1, 2, 4, 8 & Full page).
-.
Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• Special Function Support.
-.
PASR (Partial Array Self Refresh).
-.
Internal TCSR (Temperature Compensated Self Refresh) • DQM for masking.
• Auto refresh.
• • • • 64ms refresh period (8K cycle).
Com...
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