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K4M51323LC-G

Samsung semiconductor
Part Number K4M51323LC-G
Manufacturer Samsung semiconductor
Description Mobile-SDRAM
Published Dec 24, 2009
Detailed Description K4M51323LC - S(D)N/G/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS compatible...
Datasheet PDF File K4M51323LC-G PDF File

K4M51323LC-G
K4M51323LC-G

Overview
K4M51323LC - S(D)N/G/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.
5V/2.
5V • LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-.
CAS latency (1, 2 & 3).
-.
Burst length (1, 2, 4, 8 & Full page).
-.
Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• Special Function Support.
-.
PASR (Partial Array Self Refresh).
-.
Internal TCSR (Temperature Compensated Self Refresh) • DQM for masking.
• Auto refresh.
• • • • 64ms refresh period (8K cycle).
Commercial Temperature Operation (-25°C ~ 70°C).
Extended Temperature Operation (-25°C ~ 85°C).
90Balls FBGA ( -SXXX -Pb, -DXXX -Pb Free).
Mobile-SDRAM GENERAL DESCRIPTION The K4M51323LC is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.
Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications.
ORDERING INFORMATION Part No.
K4M51323LC-S(D)N/G/L/F75 K4M51323LC-S(D)N/G/L/F7L *1 Max Freq.
133MHz(CL=3), 111MHz(CL=2) 133MHz(CL=3), 83MHz(CL=2) Interface LVCMOS Package 90 FBGA Pb (Pb Free) - S(D)N/G : Low Power, Extended Temperature(-25°C ~ 85°C) - S(D)L/F : Low Power, Commercial Temperature(-25°C ~ 70°C) www.
DataSheet4U.
com NOTES : 1.
In case of 40MHz Frequency, CL1 can be supported.
Address configuration Organization 16Mx32 Bank BA0,BA1 Row A0 - A12 Column Address A0 - A8 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CON...


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